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Atomic Layer Deposition – a powerful tool for atomic-scale processing
/forschung/forschungsnews/atomic-layer-deposition-a-powerful-tool-for-atomic-scale-processing
Emerging technologies demand for precise control over film thickness and material properties. At FBH, we provide a platform for obtaining conformal dielectric layers with atomic-scale precision and…
Green ICT Camp für Studierende
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Eine Woche voller Workshops, Seminare & Exkursionen zum Thema Informations- und Kommunikationstechnik (IKT) mit einem geringen Carbon Footprint.
EMRS 2024
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Das FBH präsentiert aktuelle Forschungsergebnisse beim European Materials Research Society Fall Meeting 2024.
MNE 2024
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Das FBH beteiligt sich mit zwei Beiträgen an der 50th International Micro and Nano Engineering Conference.
A Highly Linear Single-Balanced Resistive X-band MMIC Mixer in GaN HEMT Technology
/forschung/publikationen/a-highly-linear-single-balanced-resistive-x-band-mmic-mixer-in-gan-hemt-technology
In this paper a highly linear X-band MMIC mixer implemented in a 0.25 µm GaN HEMT technology is presented. The mixer is based on a single-balanced resistive architecture using a pair of…
Ka-Band GaN Power Amplifier with Integrated DC Supply Switch and RF Switch
/forschung/publikationen/ka-band-gan-power-amplifier-with-integrated-dc-supply-switch-and-rf-switch
This work presents power amplifiers with integrated features like DC supply switch for reducing the power consumption in receive mode of an RF front end (RFFE) module and RF switch for compact RFFE…
A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs
/forschung/publikationen/a-computational-analysis-of-the-impact-of-thin-undoped-channels-in-surface-related-current-collapse-of-algangan-hemts
This study provides an insight into the impact of thin purely undoped GaN channel thickness (tch) on surface-related trapping effects in AlGaN/GaN high electron mobility transistors. Our TCAD study…
Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements
/forschung/publikationen/unraveling-carrier-distribution-in-far-uvc-leds-by-temperature-dependent-electroluminescence-measurements
The hole transport and the carrier distribution in AlGaN-based far-ultraviolett (UVC) light emitting diodes (LEDs) emitting around 233 nm was investigated. Temperature-dependent…
Academic Collaboration to Advance Ultrahigh-Power Applications
/media-center/medienschau/academic-collaboration-to-advance-ultrahigh-power-applications
The Ferdinand-Braun-Institut (FBH) and the University of Glasgow are deepening their existing collaboration in ultrahigh-power photonic applications and academic exchange programs.
Thermal stability of Pd/Zn and Pt based contacts to p- In0.53Ga0.47AsInP with various barrier layers
/forschung/publikationen/thermal-stability-of-pdzn-and-pt-based-contacts-to-p-in053ga047asinp-with-various-barrier-layers
Pd/Zn/Au contacts to p- In0.53Ga0.47AsInP with various types of barrier layers to the indiffusion of Au have been examined by Rutherford backscattering spectrometry (RBS). For the metallizations…