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Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
/forschung/publikationen/near-room-temperature-electrical-injection-lasing-for-dilute-nitride-ganaspgap-quantum-well-structures-grown-by-metal-organic-vapour-phase-epitaxy
Electrical injection lasing has been verified for GaP-based broad-area Ga(NAsP)/GaP single-quantum-well heterostructures near room temperature for the first time. The lasers have been grown by metal…
Accurate modeling of InGaN quantum wells
/forschung/publikationen/accurate-modeling-of-ingan-quantum-wells
The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN QWs are accurately computed by a self-consistent solution of the Poisson…
Optically pumped semiconductor disk laser with graded and step indices
/forschung/publikationen/optically-pumped-semiconductor-disk-laser-with-graded-and-step-indices
Results of a study of different gain section designs in nonresonantly optically pumped vertically emitting semiconductor disk lasers (SCDLs) are presented. Clear superiority of structures with…
Exciton resonance tuning for the generation of subpicosecond pulses from a mode-locked semiconductor disk laser
/forschung/publikationen/exciton-resonance-tuning-for-the-generation-of-subpicosecond-pulses-from-a-mode-locked-semiconductor-disk-laser
The authors investigate the spectral tuning of the exciton resonance of a surface quantum well saturable absorber mirror for the generation of subpicosecond pulses, employing an optically pumped…
3 W-broad area lasers and 12 W-bars with conversion efficiencies up to 40% at 650 nm
/forschung/publikationen/3nbspw-broad-area-lasers-and-12nbspw-bars-with-conversion-efficiencies-up-to-40-at-650nbspnm
650 nm broad area diode lasers with an output power of 3 W and a conversion efficiency of 40% at 15°C are presented. 5 mm wide laser bars reach 12 W output power.
9 W output power from a 808 nm tapered diode laser in pulsed mode operation with nearly diffraction-limited beam quality
/forschung/publikationen/9nbspw-output-power-from-a-808nbspnm-tapered-diode-laser-in-pulsed-mode-operation-with-nearly-diffraction-limited-beam-quality
808 nm tapered diode lasers are fabricated based on a SLOC structure with very small divergence of 18°. 14 W overall output power with 9 W of nearly diffraction-limited beam…
5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP-GaInP-AlGaAs Laser Bars With Asymmetric Cladding Layers
/forschung/publikationen/5-w-reliable-operation-over-2000nbsph-of-5-mm-wide-650-nm-algainp-gainp-algaas-laser-bars-with-asymmetric-cladding-layers
Reliable operation of 650-nm laser bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. The 5-mm-wide bars consisting of ten…
Laser-Assisted Processing of VIAs for AlGaN/GaN HEMTs on SiC Substrates
/forschung/publikationen/laser-assisted-processing-of-vias-for-algangan-hemts-on-sic-substrates
Vertical interconnect accesses (VIAs) were fabricated between the source electrode on the front and the ground on the backside of high-power microwave AlGaN/GaN high-electron mobility transistors…
Gallium nitride powerbar transistors with via holes fabricated by laser ablation
/forschung/publikationen/gallium-nitride-powerbar-transistors-with-via-holes-fabricated-by-laser-ablation
Low ohmic through-hole vias are fabricated for AlGaN/GaN HEMT powerbar devices on SiC substrates using laser ablation technique. A complete processing technique has been developed. Through-wafer…
Thermal properties and degradation behavior of red-emitting high-power diode lasers
/forschung/publikationen/thermal-properties-and-degradation-behavior-of-red-emitting-high-power-diode-lasers
The thermal properties and the degradation behavior of high-power broad-area diode lasers emitting at 650 nm are analyzed. Imaging thermography is applied to assess the bulk temperature while the…