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Atom interferometry demonstrated in space
/media-center/medienschau/atom-interferometry-demonstrated-in-space
A team of scientists has managed to successfully perform atom interferometry in space - on board a sounding rocket.
Das Potenzial von UV-Halbleitertechnologien schneller nutzen
/media-center/medienschau/das-potenzial-von-uv-halbleitertechnologien-schneller-nutzen
Verband „Advanced UV for Life e.V.“ gegründet – Kommunikationsplattform, Kooperationsbörse und Interessensverband
On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs
/forschung/publikationen/on-the-simulation-of-low-frequency-noise-upconversion-in-ingapgaas-hbts
Residual phase-noise measurements of GaAs heterojunction bipolar transistors (HBTs) with different low-frequency noise properties are used to investigate how accurate a compact HBT model can predict…
Stigmatic focussing of astigmatic beams emitted by tapered laser diodes
/forschung/publikationen/stigmatic-focussing-of-astigmatic-beams-emitted-by-tapered-laser-diodes
The tapered laser diode is a favourite for high power monomodal emission. Unfortunately, it shows a strong astigmatism in the mm-range. The inclusion of the optical path within a planar waveguide…
Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor
/forschung/publikationen/feedback-controlled-growth-of-strain-balanced-ingaas-multiple-quantum-wells-in-metal-organic-vapour-phase-epitaxy-using-an-in-situ-curvature-sensor
The growth of InGaAs quantum wells (QWs) on GaAs was optimized in situ using a high-resolution curvature sensor in metal-organic vapour phase epitaxy. The very small change in substrate curvature due…
Freestanding two inch c-plane GaN layers grown on (100) γ-lithium aluminium oxide by hydride vapour phase epitaxy
/forschung/publikationen/freestanding-two-inch-c-plane-gan-layers-grown-on-100-g-lithium-aluminium-oxide-by-hydride-vapour-phase-epitaxy
(100) γ-lithium aluminium oxide substrates of two inch diameter were fabricated from crystals grown by the Czochralski technique. Onto these substrates c-plane GaN with a thickness of about 200…
Bowing of thick GaN layers grown by HVPE using ELOG
/forschung/publikationen/bowing-of-thick-gan-layers-grown-by-hvpe-using-elog
Intrinsic stress in GaN layers grown by HVPE on sapphire substrates results in wafer breakage for thicknesses exceeding 40 µm. Using ELOG 180 µm GaN can be grown on 2 inch. The…
High and low energy proton irradiation effects on AlGaN/GaN HFETs
/forschung/publikationen/high-and-low-energy-proton-irradiation-effects-on-algangan-hfets
AlGaN/GaN heterojunction field effect transistors (HFETs) have been irradiated with protons at 68 MeV and 2 MeV with fluences up to 1013 cm-2 in order to simulate operation in space. Hall…
N-type doping of HVPE-grown GaN using dichlorosilane
/forschung/publikationen/n-type-doping-of-hvpe-grown-gan-using-dichlorosilane
N-type doping of GaN in hydride vapour phase epitaxy (HVPE) has been studied. While silane was found to be not suitable, doping from solid silicon was found to be feasible but difficult to handle.…
Characterization of free standing GaN grown by HVPE on a LiAlO2 substrate
/forschung/publikationen/characterization-of-free-standing-gan-grown-by-hvpe-on-a-lialo2-substrate
A 230 µm thick free standing GaN layer has been grown on a LiAlO2 substrate by hydride vapor phase epitaxy, with the separation of the layer from the substrate occuring spontaneously…