Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures
Yu.I. Mazura, Zh.M. Wanga, G.G. Tarasova, Min Xiaao, G.J. Salamoa, J.W. Tommb, V. Talalaevb, H. Kisselc
Published in:
Appl. Phys. Lett., vol. 86, no. 6, pp. 063102 (2005).
Abstract:
Transient photoluminescence from a series of asymmetric InAs quantum-dot bilayers with a GaAs barrier layer thickness varying from 30 to 60 monolayers between the quantum-dot planes is investigated. The interdot carrier transfer process is analyzed. In the framework of a three-level system, interdot carrier transfer times between 200 and 2500 ps are derived and compared with similar data from the literature. Within the semiclassical Wentzel-Kramers-Brillouin approximation, the observed "transfer time-barrier thickness-relation" supports nonresonant tunneling as the microscopic carrier transfer mechanism.
a Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701
b Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Straße 2A, D-12489 Berlin, Germany
c Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
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