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Passively mode-locked Yb:KLu(WO4)2 oscillators
/forschung/publikationen/passively-mode-locked-ybkluwo42-oscillators
We demonstrate passive mode locking based on the novel monoclinic double tungstate crystal Yb:KLu(WO4)2. We report the shortest pulses ever produced with an Yb-doped tungstate laser using a…
High-power 808 nm lasers with a super-large optical cavity
/forschung/publikationen/high-power-808-nm-lasers-with-a-super-large-optical-cavity
We present a detailed design and experimental study of diode laser structures emitting at 808 nm based on the combination of a GaAsP quantum well with well-established AlGaAs wave guide…
The flip-chip approach for millimeter wave packaging
/forschung/publikationen/the-flip-chip-approach-for-millimeter-wave-packaging
A particularly critical issue in this regard is module packaging, i.e., the way to assemble and connect several monolithic microwave integrated circuits (MMICs) in a multichip environment in order to…
Growth optimization for thick crack-free GaN layers on sapphire with HVPE
/forschung/publikationen/growth-optimization-for-thick-crack-free-gan-layers-on-sapphire-with-hvpe
Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H2/N2 as carrier gas leads to the lowest density of cracks in the…
Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE
/forschung/publikationen/reactor-and-growth-process-optimization-for-growth-of-thick-gan-layers-on-sapphire-substrates-by-hvpe
In total, 120 µm thick GaN layers without cracks have been grown on 2 in sapphire substrates by hydride vapor phase epitaxy. This has been achieved by optimization of the flow…
Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE
/forschung/publikationen/application-of-reflectance-anisotropy-spectroscopy-to-laser-diode-growth-in-movpe
The growth of layer structures for visible and near-infrared laser diodes is investigated in metal-organic vapour phase epitaxy (MOVPE) under production-like conditions using reflectance anisotropy…
Mobile plasma activation of polymers using the plasma gun
/forschung/publikationen/mobile-plasma-activation-of-polymers-using-the-plasma-gun
Surface activation of hydrophobic polymers is important prior to effective painting and glueing. The purpose of the plasma gun is the activation of polymers under normal pressure using a plasma…
Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures
/forschung/publikationen/interdot-carrier-transfer-in-asymmetric-bilayer-inasgaas-quantum-dot-structures
Transient photoluminescence from a series of asymmetric InAs quantum-dot bilayers with a GaAs barrier layer thickness varying from 30 to 60 monolayers between the quantum-dot planes is investigated.…
Passively cooled 940 nm laser bars with 73% wall-plug efficiency at 70 W and 25 °C
/forschung/publikationen/passively-cooled-940-nm-laser-bars-with-73-wall-plug-efficiency-at-70-w-and-25nbspdegc
940 nm laser bars with a vertical divergence of 27° (FWHM) and a filling factor of 30% were operated on passively cooled heatsinks at 25 °C. The maximum output power was 95 W,…
Numerical Field Simulation used to develop high bit-rate coaxial-to-CPW-interconnects
/forschung/publikationen/numerical-field-simulation-used-to-develop-high-bit-rate-coaxial-to-cpw-interconnects
Numerical Field Simulation used to develop high bit-rate coaxial-to-CPW-interconnects F.J. Schmückle Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489…