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RF Matching of a Reactive Ion Etching (RIE) Plasma Reactor
/forschung/publikationen/rf-matching-of-a-reactive-ion-etching-rie-plasma-reactor
RF Matching of a Reactive Ion Etching (RIE) Plasma Reactor R. Gesche Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy
/forschung/publikationen/comprehensive-characterization-of-movpe-grown-algaasalas-distributed-bragg-reflector-structures-by-optical-reflectance-x-ray-diffraction-and-atomic-force-microscopy
This paper reports on a comprehensive characterization of MOVPE-grown AlxGa1-xAs/AlAs distributed Bragg reflector (DBR) structures via optical reflectance, X-ray diffraction (XRD) and atomic force…
Growth of strained GaAsSb layers on GaAs(001) by MOVPE
/forschung/publikationen/growth-of-strained-gaassb-layers-on-gaas001-by-movpe
We investigated the growth of GaAsSb layers and quantum wells (QW) on GaAs(001) by MOVPE. Sb concentrations up to 12% were achieved at low arsine partial pressure and low growth temperature. Varying…
Avoidance of surface-related defects in MOVPE-grown InGaP layers
/forschung/publikationen/avoidance-of-surface-related-defects-in-movpe-grown-ingap-layers
Deep-level transient spectroscopy studies of n-type InGaP/GaAs structures revealed an electron trap E1 with a thermal activation energy of 0.75 eV. From the shape of the depth profiles for this…
In situ determination and control of AlGaInP composition during MOVPE growth
/forschung/publikationen/in-situ-determination-and-control-of-algainp-composition-during-movpe-growth
The influence of composition changes in (AlxGa1-x)1-yInyP grown on GaAs in metal-organic vapour-phase epitaxy on the in situ measured optical signals reflectance anisotropy (RA) and normalized…
A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling
/forschung/publikationen/a-comparative-study-of-higher-order-bragg-gratings-coupled-mode-theory-versus-mode-expansion-modeling
The modal reflectivity and loss of lamellar diffraction gratings to be used in distributed-feedback and distributed-Bragg reflector lasers were computed in dependence of wavelength, duty cycle and…
Optical Detection of Asymmetric Quantum-Dot Molecules in Double-Layer InAs/GaAs Structures
/forschung/publikationen/optical-detection-of-asymmetric-quantum-dot-molecules-in-double-layer-inasgaas-structures
Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly correlated (50%) double-layer…
Laser Diodes with highly strained InGaAs MQWs and very narrow far fields
/forschung/publikationen/laser-diodes-with-highly-strained-ingaas-mqws-and-very-narrow-far-fields
The effect of variation of the number of highly strained InGaAs quantum wells embedded in GaAs layers on the crystal quality of the epitaxial layers and AlGaAs/GaAs laser diodes was investigated.…
High power broad area 808 nm DFB lasers for pumping solid state lasers
/forschung/publikationen/high-power-broad-area-808-nm-dfb-lasers-for-pumping-solid-state-lasers
High power broad area 808 nm DFB lasers for pumping solid state lasers A. Klehr, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, H. Wenzel,…
High-Power 980-nm DFB RW Lasers With a Narrow Vertical Far Field
/forschung/publikationen/high-power-980-nm-dfb-rw-lasers-with-a-narrow-vertical-far-field
We compare 980-nm distributed-feedback ridgewaveguide lasers having cavity lengths of 1.5 and 3 mm. The maximum single-mode output powers are 500 and 700 mW, respectively. The full-width at…