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Direct Pumping of Quantum Wells Improves Performance of Semiconductor Thin-Disk Lasers
/forschung/publikationen/direct-pumping-of-quantum-wells-improves-performance-of-semiconductor-thin-disk-lasers
Quantum-well-pumped semiconductor thin-disk lasers combine the thermal advantages of rare-earth thin-disk lasers and the frequency flexibility of semiconductor lasers.
Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo- and electroreflectance methods
/forschung/publikationen/effect-of-electric-field-on-the-probability-of-optical-transitions-in-ingaasgaas-quantum-wells-observed-by-photo-and-electroreflectance-methods
The influence of an electric field on the energy spectrum and the probability of optical transitions in InGaAs/GaAs single quantum wells (QWs) of different widths has been investigated with photo-…
Thin-film microstrip lines and coplanar waveguides on semiconductor substrates for sub-mm wave frequencies
/forschung/publikationen/thin-film-microstrip-lines-and-coplanar-waveguides-on-semiconductor-substrates-for-sub-mm-wave-frequencies
It is shown that both thin-film microstrip lines (TFMSLs) and miniaturized coplanar waveguides (CPWs) offer low-dispersive propagation properties up to 1 THz. At the same time, they are fully…
Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots
/forschung/publikationen/nonresonant-tunneling-carrier-transfer-in-bilayer-asymmetric-inasgaas-quantum-dots
Carrier transfer in InAs/GaAs asymmetric quantum dot pairs has been studied by means of continuous-wave and time-resolved photoluminescence in a bilayer InAs/GaAs quantum dots system. The dependence…
MOVPE growth of semiconductor disk laser (SCDL) structures
/forschung/publikationen/movpe-growth-of-semiconductor-disk-laser-scdl-structures
Semiconductor disk lasers (SCDL), also known as vertical external-cavity surface-emitting lasers (VECSEL) or optically pumped semiconductor lasers (OPSLs) represent a new field in semiconductor…
On the possiblity of in-situ composition determination during AlGaInP growth in MOVPE
/forschung/publikationen/on-the-possiblity-of-in-situ-composition-determination-during-algainp-growth-in-movpe
AlGaInP lattice matched to GaAs is the key material in opto-electronic devices like light emitting diodes (LED), edge-emitting lasers (EEL) and vertical-cavity surface-emitting lasers (VCSEL)…
GaAs-based high power laser diodes
/forschung/publikationen/gaas-based-high-power-laser-diodes
Laser diodes with output power of several Watt from a single emitter stripe or several ten Watt from a multi-emitter array or laser bar are finding increasing application in different fields of laser…
Multi QWs for laser diodes with emission wavelengths above 1100 nm
/forschung/publikationen/multi-qws-for-laser-diodes-with-emission-wavelengths-above-1100-nm
Due to their high output power potential GaAs based laser diodes in the wavelength range at and beyond 1100 nm are interesting as pump sources for Raman amplifiers in telecommunication systems, for…
Simulation of high-power pulse generation due to modelocking in long multisection lasers
/forschung/publikationen/simulation-of-high-power-pulse-generation-due-to-modelocking-in-long-multisection-lasers
The dynamic behaviour of long monolithic modelocked lasers for the emission wavelength 1.06µm containing an active gain section and a passive cavity section was simulated. Numerical tools have…
High-Performance Laser Diodes With Emission Wavelengths Above 1100 nm and Very Small Vertical Divergence of the Far Field
/forschung/publikationen/high-performance-laser-diodes-with-emission-wavelengths-above-1100-nm-and-very-small-vertical-divergence-of-the-far-field
The effect of variations in the vertical structure on the performance of AlGaAs-GaAs laser diodes with an InGaAs quantum well (QW) emitting around 1120 nm was investigated. With very thick…