Determination of Surface Recombination Velocity so and Carrier Lifetime τo from IF (VG) Characteristics of Al/PECVD-SiNx/pn-GaAs Gated Diodes
G. Kaden1, M. Mai2
Published in:
Semicond. Sci. Technol., vol. 20, no. 11, pp. 1136-1142 (2005).
Abstract:
Investigations on Al/SiNx/pn-GaAs gated diodes reveal that the forward current IF in the recombination current region consists of a bulk current part being generated in the depletion region of the metallurgical p-n junction, and a surface recombination current part occurring at the intersection plane of this depletion region with the semiconductor surface. A variation of the gate length influences neither surface current nor HF capacitance of the p-n junction. However, the surface current can be controlled by the gate bias. A simple model using surface recombination at the junction perimeter enables evaluation of surface recombination velocity so and carrier lifetime τo in the depletion region of the p-n junction. Thus the 2kT recombination current of the gated diodes can be separated into a surface and a bulk part. This method can also be applied to other AIIIBV semiconductors.
1 Optotransmitter-Umweltschutz-Technologie e.V., Köpenicker Straße 325b, Haus 201, 12555 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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