G. Erbert, H. Wenzel, B. Sumpf, A. Knigge, K. Paschke, P. Ressel, F. Bugge, G. Tränkle

Published in:

Opt. Pur. y Apl., vol. 38, no. 3, pp. 51-57 (2005).

Abstract:

Due to there high efficiency, compact size, excellent reliability and the capability of mass production high power diode lasers are key elements for modern laser technology. In this paper tech-nological achievements concerning vertical epitaxial layer and lateral structures, facet treatment and mounting will be described. Reliable output powers of about 10W from 100µm stripe width, wall plug efficiencies of 70% at 940nm and narrow vertical divergence below 20° FWHM are latest results and steps to new applications in material processing, telecommunication, medicine and display technology. Improving the lateral brightness is now one of the most important re-search tasks. Results of monolithic approaches will be given.

Keywords:

III-V semiconductors, diode laser, technology, optical beam quality

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