High power, high gain AlGaN/GaN HEMTs with novel power bar design
R. Lossy, A. Liero, J. Würfl, G. Tränkle
Published in:
IEEE International Electron Devices Meeting, IEDM Technical Digest, Washington, USA, Dec. 5, pp. 589-591, ISBN 0-7803-9268-X (2005).
Abstract:
Gallium nitride transistors for high power microwave application are often limited by power loss due to extended transistor finger size. A new design for the gate supply is presented which allows for higher power gain compared to conventional transistor designs. Using this technique a linear gain of 20 dB is measured for a packaged power device delivering 28 Watt at 2GHz.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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