Characterisation of heavily doped base layers of heterojunction bipolar transistors by time-resolved four-wave mixing technique
R. Aleksiejunas, M. Sudzius, K. Jarasiunas, A. Maaßdorf, F. Brunner, M. Weyers
Published in:
Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, Lausanne, Switzerland, pp. 143-145 (2005).