Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides
H. Hardtdegen1, N. Kaluza1, R. Steins1, Y.S. Cho1, Z. Sofer1, M. Zorn2, K. Haberland3, J.-T. Zettler3
Published in:
phys. stat. sol. (b), vol. 242, no. 13, pp. 2581-2586 (2005).
Abstract:
In this paper we will first report on the use of real-time determination of wafer temperature for transparent substrates. With this method we will study the unintentional influence of growth parameter variations on the surface temperature. The effect on nitride growth optimization will be discussed.
1 Institute of Thin Films and Interfaces, Center of Nanoelectronics for Information Technology, Research Center Juelich, 52425 Juelich, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 LayTec Gesellschaft für in situ und Nanosensorik mbH, Helmholzstr. 13-14, 10587 Berlin, Germany
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