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Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality
/forschung/publikationen/microexternal-cavity-tapered-lasers-at-670nbspnm-with-5nbspw-peak-power-and-nearly-diffraction-limited-beam-quality
Wavelength-stabilized compact laser systems at 670 nm on a micro-optical bench are presented. The resonator concept consists of a tapered semiconductor gain medium and a reflection Bragg grating…
Semiconductor laser based THz generation and detection
/forschung/publikationen/semiconductor-laser-based-thz-generation-and-detection
We present different concepts for compact and cost effective THz technology based on semiconductor diode lasers. First, we discuss THz sources starting with modelocked diode lasers for time domain…
Interplay of screening and band gap renormalization effects in near UV InGaN light emitting diodes
/forschung/publikationen/interplay-of-screening-and-band-gap-renormalization-effects-in-near-uv-ingan-light-emitting-diodes
The impact of the barrier composition on the shift of the luminescence peak wavelength of ultraviolet (UV) emitting InGaN quantum wells was investigated theoretically. Depending on the strain and the…
A compact integrated green-light source by second harmonic generation of a GaAs distributed feedback laser diode (Proceedings Paper)
/forschung/publikationen/a-compact-integrated-green-light-source-by-second-harmonic-generation-of-a-gaas-distributed-feedback-laser-diode
The authors have developed a new compact integration concept for a green laser emitter. Compact green light sources are of great interest for several applications such as in spectroscopy and mobile…
Progress in Long-Wavelength High-Power Diode Laser Pump Sources
/forschung/publikationen/progress-in-long-wavelength-high-power-diode-laser-pump-sources
Progress in Long-Wavelength High-Power Diode Laser Pump Sources P. Leisher, K. Price, K. Kennedy, W. Dong, M. Grimshaw, S. Zhang, S. Elim, J. Patterson,…
In-situ etching of GaAs/AlxGa1-xAs by CBr4
/forschung/publikationen/in-situ-etching-of-gaasalxga1-xas-by-cbr4
In-situ etching of GaAs and AlxGa1-xAs in LP-MOVPE has been studied using carbon tetrabromide (CBr4). This source is routinely used by us as a source for carbon doping in GaAs and AlGaAs. The etching…
Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes
/forschung/publikationen/growth-parameter-optimization-of-the-gainpalgainp-active-zone-of-635nbspnm-red-laser-diodes
GaAs-based laser diodes emitting in the red spectral region have challenging material and thermal properties when reducing the emission wavelength towards the physical limit around 630 nm. To…
Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE
/forschung/publikationen/semiconductor-components-for-femtosecond-semiconductor-disk-lasers-grown-by-movpe
Diode-pumped semiconductor disk lasers (SCDLs), also known as optically-pumped semiconductor vertical-external-cavity surface-emitting lasers (OPS-VECSELs), are promising light sources for achieving…
Physik-Studienpreis an zwei FBH-Doktoranden verliehen
/media-center/medienschau/physik-studienpreis-an-zwei-fbh-doktoranden-verliehen
Die beiden FBH-Doktoranden Nils Werner (Uni Potsdam) und Matthias Karow (TU Berlin) wurden mit dem Physik-Studienpreis der Physikalischen Gesellschaft zu Berlin ausgezeichnet.
Effect of the AIN nucleation layer growth on AlN material quality
/forschung/publikationen/effect-of-the-ain-nucleation-layer-growth-on-aln-material-quality
AlN layers were grown by metalorganic vapor-phase epitaxy at high temperatures up to 1500°C. Nucleation layer growth parameters and flow conditions before nucleation were changed and the effect on…