Optical Detection of Asymmetric Quantum-Dot Molecules in Double-Layer InAs/GaAs Structures
G.G. Tarasov*, Z.Ya. Zhuchenko*, M.P. Lisitsa*, Yu.I. Mazur**, Zh.M. Wang**, G.J. Salamo**, T. Warming***, D. Bimberg***, H. Kissel****
Published in:
Semiconductors, vol. 40, no. 1, pp. 79-83 (2006).
Abstract:
Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly correlated (50%) double-layer system with an array of vertically coupled QDs (asymmetric quantum-dot molecules) was formed in a structure consisting of the 1.8-monolayer-thick first and the 2.4-monolayer-thick second InAs layers separated by 50 monolayers of GaAs. The nature of discrete quantum states in this system was studied and resonances corresponding to vertically coupled QDs were clearly observed for the first time.
* Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028 Ukraine
** Department of Physics, University of Arkansas, Fayetteville, 72701 Arkansas, the United States
*** Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany
**** Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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