E. Richter, Ch. Hennig, H. Kissel, G. Sonia, U. Zeimer, and M. Weyers

Published in:

phys. stat. sol. (c), vol. 2, no. 7, pp. 2099-2103 (2005).

Abstract:

Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H₂/N₂ as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 µm thick GaN/sapphire templates grown by MOVPE with medium compressive strain ε_zz of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain.

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