High-power, micro-integrated diode laser modules at 767 and 780 nm for portable quantum gas experiments
Appl. Opt., vol. 54, no. 17, pp. 5332-5338 (2015).
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We present micro-integrated diode laser modules operating at wavelengths of 767 and 780 nm for cold quantum gas experiments on potassium and rubidium. The master-oscillator-power-amplifier concept provides both narrow linewidth emission and high optical output power. With a linewidth (10 µs) below 1 MHz and an output power of up to 3W, these modules are specifically suited for quantum optics experiments and feature the robustness required for operation at a drop tower or on-board a sounding rocket. This technology development hence paves the way toward precision quantum optics experiments in space.
1 Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
3 Institut für Physik, Johannes Gutenberg-Universität Mainz, 55128 Mainz, Germany
4 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA
(140.0140) Lasers and laser optics; (140.3490) Lasers, distributed-feedback; (140.5960) Semiconductor lasers; (130.3120) Integrated optics devices; (020.1335) Atom optics.