Advances in group III-nitride-based deep UV light-emitting diode technology

M. Kneissl1,2, T. Kolbe1, C. Chua3, V. Kueller2, N. Lobo1, J. Stellmach1, A. Knauer2, H. Rodriguez2, S. Einfeldt2, Z. Yang3, N.M. Johnson1 and M. Weyers2

Published in:

Semicond. Sci. Technol., vol. 26, no. 014036 (2011).

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Abstract:

The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of applications. Performance-limiting factors for high-efficiency UV LEDs are identified and recent advances in the development of deep UV emitters are presented.

1 Institute of Solid State Physics, Technische Universit¨at Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA