A Flexible GaN MMIC Enabling Digital Power Amplifiers for the Future Wireless Infrastructure

A. Wentzel, S. Chevtchenko, P. Kurpas, and W. Heinrich

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Phoenix, USA, May 17-22, TH2B-5 (2015)

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This paper presents a GaN power-switch MMIC and demonstrates its potential and its versatility in realizing power amplifier (PA) modules for future LTE base station transmitters with an increased digital content. The MMIC provides a compact high-gain broadband voltage-mode PA. With a TTL-level input voltage swing of 0.4 Vpp it reaches a largesignal gain of up to 40 dB. The PA can be used as a building block for various class-S and related applications. As examples, a single-chip and an H-bridge PA module for the 800 MHz band are reported as well as a digital Doherty PA.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Index Terms:

Digital, power amplifiers, voltage-mode, class-D, class-S, GaN, LTE, base station.