Frequency-Agile Packaged GaN-HEMT using MIM Thickfilm BST Varactors

S. Preis1, A. Wiens2, N. Wolff1, R. Jakoby2, W. Heinrich1, O. Bengtsson1

Published in:

Proc. 45th European Microwave Conf. (EuMC 2015), Paris, France, Sep. 7-10, pp. 1291-1294 (2015).

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Abstract:

Nowadays wireless communication systems demand flexibility along with electrical efficiency. In this work the highly efficient GaN-HEMT technology is combined with electrically tunable Barium-Strontium-Titanate MIM varactors in parallel-plate configuration, resulting in a frequency-agile transistor module. An efficiency improvement of 19% within a tuning voltage range of 400 V was measured. Maximum CW rating is 44.4 dBm output power at 71.8% drain efficiency. Thermal cycling and modulated-signal measurements verified highly stable and linear operation.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Institut fuer Mikrowellentechnik und Photonik, Technische Universitaet Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany

Keywords:

BST, power transistors, tunable devices, varactors.