Pause Institutskolloquien
Während der vorlesungsfreien Zeit finden am FBH in der Regel keine Institutskolloquien statt. Neue Termine kündigen wir rechtzeitig an dieser Stelle an.
Institutskolloquien 2021
Feedback Aspects of Hybrid Integrated Diode Laser Systems
Nils Werner
Ferdinand-Braun-Institut Berlin
Parallel simulation and design of metasurfaces for optical engineering at the nanoscale
Prof. Dr. Antonio Calà Lesina
Hannover Centre for Optical Technologies, Leibniz Universität Hannover
Experimental quantum science with ultracold molecules
Giacomo Valtolina, PhD.
Fritz-Haber-Institut der Max-Planck-Gesellschaft
GaN-HEMT basierte THz-Detektoren
Adam Rämer
Ferdinand-Braun-Institut Berlin
Stabilizing frequency combs in passively mode-locked semiconductor lasers: Cavity design and timing jitter
Prof. Dr. Kathy Lüdge
TU Berlin, Institut für Theoretische Physik
Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers
Dr. Thorben Kaul
TRUMPF Laser Berlin
Thermal waveguiding in GaAs based devices
Philipp Hildenstein
Ferdinand-Braun-Institut
Degradation of UV LEDs and the role of charge carrier density
Jan Ruschel
Ferdinand-Braun-Institut Berlin
Lateral regrown blocking structures as technological tools to enable higher power, efficiency and brightness in high-power broad-area lasers
Mohamed Elattar
Ferdinand-Braun-Institut Berlin
Translation of Biomedical and Bioanalytical Surface-Enhanced Raman Scattering (SERS) to Real-World Settings through the Combination with SERDS
Ass. Prof. Pietro Strobbia
University of Cincinnati, Department of Chemistry
Nanoscale structured light and local light-matter interactions
Sergey Nechayev
Ferdinand-Braun-Institut Berlin
Optisches Radar – Bildgebende Verfahren in der Radartechnik
Dr.-Ing. Dirk Nüßler
Fraunhofer-Institut für Hochfrequenzphysik und Radartechnik FHR
Recent Developments on Freiberger Substrates
Dr. Stefan Eichler
Freiberger Compound Materials GmbH, Freiberg
150mm buffer-free GaN-on-SiC HEMT epitaxial wafers for microwave and power device
Jr-Tai Chen, Ph.D.
SweGaN AB, Schweden
Investigation of power saturation mechanisms in GaAs based high power diode lasers
Seval Arslan
Ferdinand-Braun-Institut Berlin
