Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers
Dr. Thorben Kaul
TRUMPF Laser Berlin
Institutskolloquien 2021
Thermal waveguiding in GaAs based devices
Philipp Hildenstein
Ferdinand-Braun-Institut
Degradation of UV LEDs and the role of charge carrier density
Jan Ruschel
Ferdinand-Braun-Institut Berlin
Lateral regrown blocking structures as technological tools to enable higher power, efficiency and brightness in high-power broad-area lasers
Mohamed Elattar
Ferdinand-Braun-Institut Berlin
Translation of Biomedical and Bioanalytical Surface-Enhanced Raman Scattering (SERS) to Real-World Settings through the Combination with SERDS
Ass. Prof. Pietro Strobbia
University of Cincinnati, Department of Chemistry
Nanoscale structured light and local light-matter interactions
Sergey Nechayev
Ferdinand-Braun-Institut Berlin
Optisches Radar – Bildgebende Verfahren in der Radartechnik
Dr.-Ing. Dirk Nüßler
Fraunhofer-Institut für Hochfrequenzphysik und Radartechnik FHR
Recent Developments on Freiberger Substrates
Dr. Stefan Eichler
Freiberger Compound Materials GmbH, Freiberg
150mm buffer-free GaN-on-SiC HEMT epitaxial wafers for microwave and power device
Jr-Tai Chen, Ph.D.
SweGaN AB, Schweden
Investigation of power saturation mechanisms in GaAs based high power diode lasers
Seval Arslan
Ferdinand-Braun-Institut Berlin
