Wellenlängenstabilisierte Grundmode Laser für Hochleistungsanwendungen
Martin Wilkens
Ferdinand-Braun-Institut
Institutskolloquien 2018
Simulationen von Breitstreifenlasern basierend auf einem Wanderwellenmodell
Anissa Zeghussi
Ferdinand-Braun-Institut
Review of bias-temperature instabilities at the III-N/dielectric interface
Dr. Clemens Ostermaier
Infineon Technologies AG
Exploring the efficiency limitations of semiconductor diode lasers
Prof. Stephen Sweeney
University of Surrey, UK
Neue Hochleistungs-Pikosekunden- und Nanosekunden-Diodenlaser-Impulsquellen
Andreas Klehr, Armin Liero, Thomas Filler
Ferdinand-Braun-Institut, Berlin
Spatially Offset Raman Spectroscopy (SORS) in Clinics, Security and Art
Prof. Pavel Matousek
STFC Rutherford Appleton Laboratory
Statistical Approaches to AlGaN/GaN power device reliability
Dr. Peter Moens
ON Semiconductor Belgium
Erzeugung optischer ps-Pulse mit modengekoppelten CPM-Laserdioden für kompakte THz-Spektroskopiesysteme
Thomas Prziwarka
Ferdinand-Braun-Institut, Berlin
Electromagnetic Simulations of Parasitic Effects in On-Wafer Measurements above 100 GHz
Gia Ngoc Phung
Ferdinand-Braun-Institut Berlin
Brilliant high-power violet-emitting laser diodes – final presentation of project results
P. Perlin, TopGaN
J.-H. Kang, Ferdinand-Braun-Institut
P. Keshet, eagleyard Photonics GmbH
Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
Dr. Christian Fuchs
Philipps-University Marburg
Advanced Raman spectroscopic techniques as versatile tool for meat, seawater and bone quality control
Kay Sowoidnich
STFC Rutherford Appleton Laboratory
GaN- a long way to go from crystal growth to substrates for reliable electronic devices: The effects of structural disturbances on the electrical behavior of GaN from a materials perspective
Dr. Elke Meissner
Fraunhofer IISB
Thermal and Electro-Thermal Modeling in Power Electronics: from Device, to Package, to System
Prof. Roberto Menozzi, PhD
The University of Parma
Optimization of GaN Microwave Power Amplifiers with Class-G Supply Modulation
Nikolai Wolff
Ferdinand-Braun-Institut, Berlin
Herausforderungen bei der praktischen Anwendung von GaN Leistungshalbleitern
Martin Krellmann
Beaplas GmbH
Hocheffiziente frequenzagile Mikrowellen-Leistungsverstärker auf Basis von GaN und Barium-Strontium-Titanate
Sebastian Preis
Ferdinand-Braun-Institut Berlin
