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Frontiers of III-V Compounds and Devices
/forschung/publikationen/frontiers-of-iii-v-compounds-and-devices
The paper presents an overview on the European status of electronic devices for micro- and mm- wave applications based on III/V compound semiconductors. Both low noise and power devices for…
Design and Evaluation of a Novel Spark-Plug Based on a Microwave Coaxial Resonator
/forschung/publikationen/design-and-evaluation-of-a-novel-spark-plug-based-on-a-microwave-coaxial-resonator
Innovative automotive engine concepts using direct gasoline injection demand for new ignition concepts. A novel spark-plug concept based on a microwave coaxial resonator is proposed, which generates…
The Influence of Microwave Two-Port Noise on Residual Phase Noise in GaAs-HBTs
/forschung/publikationen/the-influence-of-microwave-two-port-noise-on-residual-phase-noise-in-gaas-hbts
We present residual phase noise measurements of GaInP/GaAs HBTs, which are widely used as gain elements in microwave MMIC oscillators. These measurements allow to separate the influence of the noise…
Low Phase-Noise GaAs-HBT Monolithic W-Band Oscillator
/forschung/publikationen/low-phase-noise-gaas-hbt-monolithic-w-band-oscillator
A W-band MMIC VCO using GaInP/GaAs HBTs is presented. It achieves a wide tuning range of 5 % and a SSB phase noise of -102 dBc/Hz at 1 MHz offset fre- quency. To our knowledge, this is…
A GaAs-HBT Broadband Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmission
/forschung/publikationen/a-gaas-hbt-broadband-amplifier-with-near-ft-cut-off-frequency-for-high-bitrate-transmission-1
A broadband amplifier for high-bitrate transmission is presented, using a standard GaAs-HBT process with fT and fmax of 36 and 170 GHz, respectively, at the operating bias point. The design…
A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology
/forschung/publikationen/a-40-gbps-broadband-amplifier-for-modulator-driver-applications-using-a-gaas-hbt-technology
A broadband amplifier suitable for high-bitrate modulator driver applications is fabricated using a GaAs-HBT process with fT and fmax of 45 and 170 GHz, respectively. The design takes optimum…
Determination of band offsets in strained InxGa1-xAs/GaAs quantum wells by capacitance-voltage profiling and Schrödinger-Poisson self-consistent simulation
/forschung/publikationen/determination-of-band-offsets-in-strained-inxga1-xasgaas-quantum-wells-by-capacitance-voltage-profiling-and-schroedinger-poisson-self-consistent-simulation
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Broadband characterization of a microwave probe for picosecond electrical pulse measurements
/forschung/publikationen/broadband-characterization-of-a-microwave-probe-for-picosecond-electrical-pulse-measurements
The time-domain characterization of high-frequency devices with coaxial connectors requires the transfer of picosecond electrical pulses between coplanar and coaxial lines. Microwave probes are often…
A Hybrid FDTD/Quasistatic Technique Including Effects of Lossy Metals
/forschung/publikationen/a-hybrid-fdtdquasistatic-technique-including-effects-of-lossy-metals
This paper presents a method of coupling a quasistatic field solver with the finite-difference time-domain method for the more efficient modeling of multilayer packaging structures including metal…
Optimizing MMIC Reflection-Type Oscillators
/forschung/publikationen/optimizing-mmic-reflection-type-oscillators
In this paper, optimization of the loaded quality factor QL for reflection-type HBT oscillators is investigated. Main result is an optimum relation between the S parameter phases at the three…