Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30°

C. Kaspari, B. Sumpf, M. Zorn, J. Fricke, P. Ressel, K. Paschke, M. Weyers, and G. Erbert

Published in:

IEEE Photonics Technol. Lett., vol. 20, no. 22, pp. 1824-1826 (2008).

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Highly efficient operation of 637-nm broad-area (BA) laser diodes and laser bars with a small vertical far field of 30° (full-width at half-maximum) is reported. The laser structure consists of an InGaP quantum well embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. Single BA emitters with a stripe width of 30 µm emitted a maximum continuouswave (CW) power of 540 mW at 15°C. Six-millimeter-wide laser bars with 12 30-µm-wide emitters (filling factor of 6%) reached CW power levels of 5.4 W at 15°C. The maximum conversion efficiency of single lasers and laser bars at 15°C was 37% and 31%, respectively.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Index Terms:

Conversion efficiency, continuous-wave (CW) lasers, red lasers, semiconductor lasers.