International Workshop on Nitride Semiconductors - IWN 2016
Das FBH präsentiert auf der Konferenz die folgenden Beiträge und zwei eingeladene Vorträge:
- Exploring the Limits of AlGaN‐Based Deep UV LEDs (eingeladener Vortrag)
- Low Defect Density AlN and AlGaN for deep UV Emitters (eingeladener Vortrag)
- Influence of Silicon Doping on Defects in MOVPE‐Grown AlN/Sapphire Templates
- Influence of Inhomogeneous Broadening on the Optical Polarization Properties of m‐Plane, (20‐2‐1) and (20‐21) InGaN Quantum Wells
- Epitaxial Growth and Characterization of Deep UV AlGaN Devices on Bulk AlN Substrates
- AlGaN Layers Grown on Patterned Sapphire by HVPE
- On the Origin of Surface Donors in AlGaN/GaN Metal‐Oxide‐Semiconductor Heterostructures with Al2O3 Gate Dielectric—Correlation of Electrical, Structural, and Chemical Properties
- Development of Deep UV LEDs for Nitrogen Oxide Sensing
- Impact of Internal Interfaces on AlGaN Metal‐Semiconductor‐Metal Photodetectors
- Quantitative Analysis of Threading Dislocations in Si‐Doped Low Resistivity AlGaN Layers Using Electron Channeling Contrast Imaging
- Opposing Approaches for Low Threshold in AlGaN‐Based UV‐C Laser—High Internal Quantum Efficiency vs Homogeneity
- Determination of Polarization Fields in (0001) AlInN/GaN and AlGaN/GaN Heterostructures by Capacitance‐Voltage‐Measurements
- Smooth and Uniform Al0.8Ga0.2N:Si Superlattice Cladding Layers for Deep UV Laser Diodes
- Optically Pumped Distributed Feedback Lasers Based on GaN with 10th‐Order Laterally Coupled Surface Gratings
- Surface‐Related Effects on the Temporal Change in (Al)GaN Photoluminescence Intensity