European Microwave Week

Auf der Konferenz präsentiert das FBH neue Forschungsergebnisse:

• An Efficient W-Band InP DHBT Digital Power Amplifier
• Balanced G-Band Gm-Boosted Frequency Doublers in Transferred Substrate InP HBT Technology
• Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements
• GaN Laser Driver Switching 30 A in the Sub-Nanosecond Range
• Response Time of VSWR Protection for GaN HEMT Based Power Amplifiers
• A 315 GHz Reflection Type Push-Push Oscillator in InP-DHBT Technology
• A 100 GHz Fundamental Oscillator with 25% Efficiency Based on Transferred-Substrate InP-DHBT Technology
• Two-Stage Harmonically Tuned 50 W GaN-HEMT Wideband Power Amplifier
• Discrete Gate Bias Modulation of a Class-G Modulated RF Power Amplifier
• A New Modulator for Digital RF Power Amplifiers Utilizing a Wave-Table Approach
• Synthesis and Design of Suspended Substrate Stripline Filters for Digital Microwave Power Amplifiers