Konferenz: 24.-28.07.2017, Straßburg (Frankreich)


Das FBH ist auf der International Conference on Nitride Semiconductors mit  einem eingeladenen Vortrag vertreten: Review of vertical GaN-based FETs
weitere Vorträge:

  • Enhanced efficiencies from UVB light emitting diodes with transparent p-AlGaN superlattices (TUB, FBH)
  • Degradation effects in AlGaN-based UVC light-emitting diodes (FBH, TUB)
  • AlN seed layers from atomic layer deposition on sapphire for MOVPE growth of AlN (FBH, SENTECH)
  • MOVPE growth of AlN on thermally roughened sapphire (FBH)