Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes
S. Hagedorna, S. Waldea, A. Knauera, N. Susilob, D. Pacaka,b, L. Cancellarac, C. Netzela, A. Mogilatenkoa, C. Hartmannc, T. Wernickeb, M. Kneissla,b, and M. Weyersa
phys. stat. sol. (a), vol. 217, no. 14, Special Issue: Ultraviolet Materials and Devices, pp. 1901022, doi:10.1002/pssa.201901022 (2020).
Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to improve the properties of such AlN/sapphire templates by the combination of high-temperature annealing (HTA) and patterned AlN/sapphire interfaces are discussed. While the beneficial effect of HTA is demonstrated for UVC LEDs, the growth of relaxed AlGaN buffer layers on HTA AlN is a challenge. To achieve relaxed AlGaN with a low dislocation density, the applicability of HTA for AlGaN is investigated.
a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
b Institute of Solid State Physics, Technical University Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
c Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
AlGaN, AlN, epitaxial lateral overgrowths, high-temperature annealing, nanopatterned sapphires, ultraviolet light-emitting diodes
Copyright © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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