Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
G. Blume, J. Pohl, D. Feise, M. Jendrzejewski, M. Greiner, P. Ressel, and K. Paschke
Published in:
Opt. Lett., vol. 40, no. 8, pp. 1757-1759 (2015).
Abstract:
Using an AlGaInP-based truncated tapered power amplifier, it was possible to boost the output power of a 647-nm distributed Bragg reflector laser from 50 mW to more than 500 mW. The light source has the potential to replace bulky Kr ion lasers still in use at this wavelength.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
OCIS codes:
(140.2020) Diode lasers; (140.7300) Visible lasers; (140.4480) Optical amplifiers; (090.0090) Holography; (120.3180) Interferometry; (300.3700) Linewidth.
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