Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment
C. Nasser1, P. Luo2,3, F. Schnieder3, M. Rudolph2,3, and D. Ritter1
IEEE Trans. Electron Devices, vol. 66, no. 5, pp. 2146-2150 (2019).
The large-signal RF power performance of an AlGaN/GaN heterostructure field-effect transistor (HFET) is simulated by technology computer-aided design (TCAD) software, and compared to measurement. A clear procedure for extraction of the simulation physical parameters is described. Trapping effects are included, but temperature effects are not. Good agreement between simulation and measurement is demonstrated, paving the way for efficiency optimization of GaN HFETs using TCAD.
1 Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
2 Department of Electrical Engineering, Brandenburg University of Technology (BTU), 03046 Cottbus, Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), 12489 Berlin, Germany
HEMTs, semiconductor device modeling, technology computer-aided design (TCAD).
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