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Progress in GaAs-based Semiconductor Sources For High Brightness Beam-Combined Applications

P. Crump and G. Tränkle

Published in:

Photonics Device Workshop 2020, Virtual Event, Nov. 20 (2020).


An overview is presented of studies at the FBH into GaAs-based semiconductor sources tailored for higher brightness in beam-combined applications, by making use of innovative device and packaging technology. First, high brightness pulsed-pumping is enabled using stacks of wide-aperture diode lasers, designed for simple low-cost geometric beam combination. Second, high-power single mode lasers tailored for efficient external wavelength locking can be combined into a single diffraction limited beam using dense-wavelength beam techniques, for direct material processing. Finally, customized tapered amplifiers can be efficiently combined into a diffraction limited beam at a single wavelength, for the very highest brightness.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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