P. Ressel1, P.W. Leech2, G.K. Reeves3, W. Zhou3, E. Kuphal4
Published in:
Appl. Phys. Lett., vol. 68, no. 13, pp. 1841-1843 (1996).
Abstract:
The resistivity and interfacial characteristics of Pd/Zn/Pd/Au and Pd/Zn/Au/LaB6/Au contacts to p-In0.53Ga0.47As have been investigated. Annealing of the contacts at 375-425 °C yielded a minimum in specific contact resistance, ρc, of 2×10-7 Ω cm2 for the Pd/Zn/Pd/Au contacts and 1×10-6 Ω cm2 for the Pd/Zn/Au/LaB6/Au configuration. The measurement of ρc for the Pd/Zn/Pd/Au system is the lowest reported for an ohmic contact to ρ-In0.53Ga0.47As doped to ≥1×1019 cm-3. In the Pd/Zn/Au/LaB6/Au scheme, the minimum in ρc was the same whether the Zn was incorporated as a structural layer or as Zn ions implanted into the interfacial Pd. At ≥375 °C, the LaB6 layer limited the indiffusion of Au and the degradation of the In0.53Ga0.47As substrate.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
2 Telstra Research Laboratories, Clayton, 3168 Victoria, Australia
3 Royal Melbourne Institute of Technology, 3001 Victoria, Australia
4 Deutsche Telekom, FTZ, Am Kavalleriesand 3, D-64295 Darmstadt, Germany
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