Novel Approach to Trapping Effect Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements
P. Luo1,2, O. Bengtsson1 and M. Rudolph1,2
Published in:
Proc. 11th European Microwave Integrated Circuits Conf. (EuMIC 2016), London, UK, Oct. 3-4, pp. 157-160 (2016).
Abstract:
This paper presents a novel approach to account for trapping effects in GaN HEMT devices. Recent works demonstrated good results relying on physics-based model enhancements. Unfortunately, none of the models is yet part of standard HEMT models in commercial circuit simulators, and the effort in model parameter extraction is high. In this work, we were able to show that a comparable model accuracy can be achieved using the standard Chalmers (Angelov) model extracted from pulsed S-parameters. It is shown that a broad range of drain bias voltages can be covered if only three model parameters are adjusted with limited addtional measurement effort.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Brandenburg University of Technology, Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany
Index Terms:
GaN HEMT modeling, Chalmers model, trapping effects, pulsed S-parameter measurements.
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