Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies
E. Kaule1, R. Doerner2, N. Weimann3,2, M. Rudolph1,2
13th German Microwave Conference (GeMiC 2020), Cottbus, Germany, Mar. 09-11, ISBN 978-3-9820397-1-8, pp. 52-55 (2020).
This paper investigates noise modeling of transferred-substrate indium phosphide double heterobipolar transistors (InP DHBTs). It is shown that the shot noise of these devices exhibits a pronounced correlation which allows for a reliable extrapolation of the noise performance based on standard noise measurement at lower frequencies, or even on the knowledge of small-signal model parameters alone.
1 Brandenburg University of Technology Cottbus-Senftenberg (BTU), Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Insitut für Höchstfrequenztechnik (FBH), Berlin, Germany
3 University of Duisburg-Essen, Duisburg, Germany
InP DHBT, noise, modeling, analysis, correlation.
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