High-brightness 735 nm tapered diode lasers
B. Sumpf , R. Hülsewede, G. Erbert, C. Dzionk, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, and G. Tränkle
Published in:
Electron. Lett., vol. 38, no. 4, pp. 183-184 (2002).
Abstract:
High brightness 735 nm single emitter tapered diode lasers were manufactured and analysed. A beam propagation factor M2 smaller than 1.4 is achieved up to an output power of 2 W.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
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