Gallium nitride powerbar transistors with via holes fabricated by laser ablation
R. Lossy, A. Liero, O. Krüger, J. Würfl, and G. Tränkle
Published in:
phys. stat. sol. (c), vol. 3, no. 3, pp. 482-485 (2006).
Abstract:
Low ohmic through-hole vias are fabricated for AlGaN/GaN HEMT powerbar devices on SiC substrates using laser ablation technique. A complete processing technique has been developed. Through-wafer micro holes with an aspect ratio of 4 were drilled using pulsed UV laser machining. A plating technique on steep side wall could be established. Feasibility and performance of laser drilled via holes were tested with large power devices and proved successful up to the packaging level. The device demonstrated 14 dB of linear gain and a saturated output power of 40 W.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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