Electric-field-induced redistribution of free carriers at isotope (In,Ga)P/GaAs interfaces
P. Krispin1, A. Knauer2 , S. Gramlich2
Published in:
Mater. Sci. Eng., B, vol. 88, pp.129-133 (2002).
Abstract:
Metal-semiconductor contacts are applied to study depth-resolved electrical characteristics of Si- and Zn-doped GaAs/(In,Ga)P/GaAs heterojunctions by capacitance-voltage measurements. The measured depth profiles of carrier concentration are compared with calculations based on self-consistent solutions of the Poisson equation. Different growth conditions are chosen in order to produce heterointerfaces with (In,Ga)P layers of various degrees of order. It is shown that (In,Ga)P ordering induces piezoelectric polarization charges at interfaces with GaAs, the density of which rises with increasing degree of order. The related electric field results in redistributions of free carriers. For weakly ordered (In,Ga)P, the interfaces are found to be of type I.
1 Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Keywords:
InGaP/GaAs interfaces, interfacial sheet charges, (In,Ga)P ordering
© 2002 Elsevier Science B.V.. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Elsevier Science B.V. 
Full version in pdf-format.
<img src="../../../images/space.gif" width="10" height="1" border="0" alt="" />