Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive
C. Andrei1, O. Bengtsson2, R. Doerner2, S.A. Chevtchenko2, W. Heinrich2, M. Rudolph1,2
Proc. 45th European Microwave Conf. (EuMC 2015), Paris, France, Sep. 7-10, pp. 231-234 (2015).
This paper presents the analysis of a highly robust low-noise amplifier subjected to high input power stress conditions. The LNA is realized in coplanar technology using the 0.25µm GaN-HEMT MMIC process from FBH, and a novel stacked topology at the first stage. The LNA survived 43dBm of input power overdrive at 5GHz measured in a coaxial test-fixture. The nonlinear measurement setup and the high power overdrive behaviour of the LNA are analized in this work. The destruction mechanism of this LNA was identified to be the melting of air bridges in a spiral inductor.
1 Ulrich L. Rohde Chair of RF and Microwave Techniques, Brandenburg University of Technology, Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
low noise amplifier; stacked amplifier; ruggedness; input power overdrive.
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