E. Bahat Treidel, F. Brunner, E. Brusaterra, M. Wolf, A. Thies, J. Würfl and O. Hilt

Published in:

Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2023), Orlando, USA, May 15-18, p. 9.3 (2023).

Abstract:

We demonstrate parallel plane junction (avalanche) and punch through one dimensional pn-diodes grown on sapphire substrates and compare the results to the GaN breakdown voltage values as a function of the drift region doping concentration. For this demonstration, five different GaN on sapphire substrates with different drift region doping concentrations were grown. A power figure of merit of 1.43 GW / cm² is observed for quasi-vertical GaN on sapphire pn-diodes with a drift region thickness of 5 µm and a doping of 1.2 × 10¹⁶ cm^-3. These pn-diodes demonstrated an excellent blocking performance with hard breakdown at 920 V and a specific drift region resistance of 0.57 mΩ·cm².

Keywords:

Epitaxy, Drift Region, Vertical, GaN, Avalanche, Punch-through

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