Designing high-power single-frequency lasers

H. Wenzel

Published in:

Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 31-34 (2003).

Abstract:

Introduction:
Single-frequency, single-spatial mode distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers have important applications in communication, spectroscopy and frequency conversion. Whereas for InP-based lasers in the 1300 nm - 1550 nm wavelength range the fabrication of integrated Bragg gratings is well-established using multi-step epitaxial techniques, it is more complicated for shorter-wavelength GaAs-based lasers. The achievement of an output power (P) of more than 100mW is an additional challenge. Here, we well focus on the development of GaAs-based ridge waveguide (RW) DFB lasers emitting below 1 µm.

Our group obtained more than 100 mW CW output power at 780 nm and more than 300 mW at 860 nm with RW DFB lasers [1][2]. For the achievement of these results, besides an optimised fabrication procedure a carefully modelling of the complete device is necessary. In my talk I will present the major modelling aspects as well as some technological details and experimental results. In this abstract, I will address some selected issues.

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