H. Wenzel , A. Klehr, M. Braun, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, B. Sumpf, M. Weyers, and G. Tränkle

Published in:

SPIE Proceedings vol. 5595, 110-123, 2004.

Abstract:

The development of high-power GaAs-based ridge wave guide distributed feedback lasers is described. The lasers emit between 760 nm and 980 nm either in TM or TE polarization. Over a large current range, the lasers exhibit stable operation in a single transversal and longitudinal mode. A maximum continuous-wave output power of about 400 mW, a spectral linewidth below 1 MHz and a side mode suppression ratio greater than 50 dB have been demonstrated at room temperature. The distributed feedback is provided by first or second order gratings, formed in an InGaP/GaAsP/InGaP multilayer structure embedded into the p-AlGaAs cladding layer. Applications of such wavelength stabilized devices in non-linear frequency conversion, spectroscopy and for excitation of atomic transitions are discussed.

Keywords:
Semiconductor lasers, distributed-feedback lasers, high-power lasers

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