D-band LNA using a 40-nm GaAs mHEMT technology
R. Cleriti1, W. Ciccognani1, S. Colangeli1, A. Serino1, E. Limiti1, P. Frijlink2, M. Renvoise2, R. Doerner3, and M. Hossain3
Published in:
Proc. 12th European Microwave Integrated Circuits Conf. (EuMIC 2017), Nuremberg, Germany, Oct. 9-10, pp. 105-108 (2017).
Abstract:
A D-band LNA is reported serving as a test vehicle of an under-development 40 nm GaAs HEMT technology developed by OMMIC foundry. The amplifier, designed on the basis of custom small-signal equivalent-circuit models, is featured by state-of-the-art performance, and in particular has a noise figure as low as 4 dB at 140 GHz and a gain higher than 20 dB approximately from 115 GHz to 160 GHz. The main steps of the non-standard design flow are also illustrated, hinged on two main ideas: a closed-form analysis of the input/output matching bounds of the active devices, on the one hand, and an efficient optimization approach to shift the reference planes of EM-simulated networks, on the other.
1 Electronic Engineering Department, University of Rome Tor Vergata, Via del Politecnico 1 Rome, Italy 00133
2 OMMIC, Cedex Limeil-Brevannes, France 94453
3 Microwave Department, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Index Terms:
D-band, LNA, low-noise amplifier, GaAs, HEMT, passive imaging.
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