CW Technique for Measurement of Linewidth Enhancement Factor: Application to 735-nm Tensile-Strained GaAsP Quantum-Well Lasers
D. Rodríguez1, L. Borruel1, I. Esquivias1, H. Wenzel2 , B. Sumpf2, and G. Erbert2
Published in:
IEEE Photonics Technology Letters, vol. 16, 1432-1434, 2004.
Abstract:
We present a procedure for determining the linewidth enhancement factor (α parameter) in semiconductor lasers under continuous-wave (CW) operation. It is based on the measurement of the amplified spontaneous emission spectra, with a proper correction of thermal effects. The method is applied to 735-nm tensile strained GaAsP-AlGaAs quantum-well lasers and it is validated by comparing CW results, after correcting thermal effects, with pulsed measurements. The results show a low value of the α parameter attributed to the tensile strain.
1 Departamento de Tecnología Fotónica, Universidad Politécnica de Madrid, Madrid 28040, Spain
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index Terms:
GaAsP, linewidth enhancement factor, quantum-well (QW) laser, semiconductor lasers.
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