K.Y. Osipov, S.A. Chevtchenko, O. Bengtsson, P. Kurpas, F. Brunner, N. Kemf, J. Würfl and G. Tränkle

Published in:

Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2015), Scottsdale, USA, May 18-21, pp. 269-272 (2015).

Abstract:

This work presents investigations of the dynamic behavior of short channel AlGaN/GaN HEMTs with Lg varying from 100 nm to 200 nm. Transistors were fabricated using AlGaN/GaN epitaxial structures with nominally the same GaN:Fe buffer layer and AlGaN barrier layers with different thicknesses and Al mole fractions. DC measurements of fabricated transistors showed similar performance for all epitaxial structures as well as for all L_g. Dynamic I-V analysis (DIVA) revealed significant differences between transistors with different L_g fabricated on the same epitaxial structure, as well as between transistors with the same L_g fabricated on different epitaxial structures. Differences in the amount of drain current reduction, g_mmax degradation and knee voltage walkout at gate lag conditions were observed. The differences are attributed to the traps located in the area under the gate electrode. The physical mechanism of the observed phenomena was related to the interaction of several effects that influence electron mobility in the channel.

Keywords:

Ka-band, GaN HEMT, gate lag, short channel.

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