Correlation of InGaP(001) surface structure during growth and CuPtB-type bulk ordering
M. Zorn° , A. Bhattacharya°, M. Weyers°, J.-T. Zettler*, W. Richter*
Published in:
MRS. Proc., vol. 583, pp. 217-221 (1999).
Abstract:
The mechanism causing the CuPtB-type ordering of InGaP grown lattice matched to GaAs was investigated by in-situ reflectance anisotropy spectroscopy (RAS/RDS). Experiments were performed during InGaP growth in metal-organic vapour phase epitaxy (MOVPE). From the experiments it can be concluded that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2x1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2x4)-like surface dimer configuration.
°Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
*Institut für Festkörperphysik, Technische Universität Berlin, Sekr. PN 6-1, Hardenbergstr. 36, 10623 Berlin, Germany
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