Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs
M. Fregolenta, E. Brusaterraa, C. De Santia, K. Tetznerb, J. Würflb, G. Meneghessoa, E. Zanonia and M. Meneghinia
Published in:
Proc. of SPIE, vol. 12002, Oxide-based Materials and Devices XIII, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1200206 (2022).
a Department of Information Engineering, University of Padova, Padova, Italy
b Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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