Compact Stacked Rugged GaN Low-Noise Amplifier MMIC
E. Kaulea, P. Luob, C. Andreia, S.A. Chevtchenkoc, M. Rudolpha,c
Published in:
IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), Tel Aviv, Israel, Nov. 1-3, ISBN 978-1-6654-3557-4, pp. 286-288 (2021).
Abstract:
Rugged GaN HEMT LNAs are well established components for high-performance microwave receivers. In a previous work, we introduced the concept of a stacked circuit topology, which allows for a power handling capability exceeding conventional GaN HEMT designs. In this paper, we present an improved design of a stacked GaN LNA MMIC, showing that the concept is capable of providing competitive noise figures while minimizing the requirement for additional chip area.
a Brandenburg University of Technology Cottbus-Senftenberg (BTU), Germany
b was with BTU, now with Chengdu Danxi Technology Co., Ltd.
c Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Index Terms:
GaN, ruggedness, low-noise amplifier (LNA), MMIC, receiver
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