J. Pohl, F. Bugge, G. Blume, A. Knigge, S. Knigge, G. Erbert, M. Weyers

Published in:

J. Cryst. Growth, vol. 414, pp. 205-218 (2015).

Abstract:

Carbon-doped AlGaAs and AlInP doped with zinc or magnesium are compared as p-cladding material for laser diodes emitting around 633 nm. Mg doping of Al(Ga)InP is linearly dependent on the Cp₂Mg flow rate after a doping delay in which a sufficient Mg coverage of the surface is built up.Laser diodes with Mg and Zn doped cladding were fabricated, compared and analysed by secondary ion mass spectrometry. Combining a Zn-doped AlGaInP waveguide with a Mg-doped cladding layer reveals diffusion interaction between Mg and Zn and results in enhanced Mg back diffusion into the waveguide counteracting the Mg doping delay. Laser diodes emitting at the wavelength of 632 nm with an output power of more than 1 W per facet have been demonstrated using this dopant combination.

Keywords:

GaInP-AlGaInP, AlInP cladding layers, P-doping, Red laser diodes.

© 2015 Elsevier B.V. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Elsevier B.V.

Full version in pdf-format.