Bowing of thick GaN layers grown by HVPE using ELOG
Ch. Hennig , E. Richter, U. Zeimer, M. Weyers, and G. Tränkle
Published in:
phys. stat. sol. (c), vol. 3, no. 6, pp. 1466-1470 (2006).
Abstract:
Intrinsic stress in GaN layers grown by HVPE on sapphire substrates results in wafer breakage for thicknesses exceeding 40 µm. Using ELOG 180 µm GaN can be grown on 2 inch. The bowing of the wafers caused by extrinsic stress due to the different thermal expansion is not affected by ELOG. Using WSiN as mask material a 600 µm thick free-standing 2 inch GaN layer has been obtained by exploiting the shear forces occurring during cooling after growth for separation from the ELOG template.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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