Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices
M. Rudolph1,2 , R. Doerner2
Published in:
8th German Microwave Conference (GeMiC 2014), Aachen, Germany, Mar. 10-12, ITG-Fachbericht Band 246, ISBN 978-3-8007-3585-3 (2014).
Abstract:
This paper proposes a new bias-dependent description for the Pospieszalski noise model for GaN HEMT devices. It is also proposed to replace the traditional description of the drain noise temperature by a general noise power which is linked to the drain current. A well-behaved bias dependence of the new parameter is found and we were able to show that the new approach reduces uncertainty in the nonlinear noise model.
1Brandenburg University of Technology Cottbus, Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany
2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index Terms:
MODFETs, noise, semiconductor device modeling, semiconductor noise modeling
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