Analysis of strain and composition distributions in laterally strain-modulated InGaAs nanostructures after overgrowth with GaAs or InGaP
U. Zeimer, H. Kirmse1, J. Grenzer2, S. Grigorian2, H. Kissel, A. Knauer, U. Pietsch2, W. Neumann1, M. Weyers, G. Tränkle
Published in:
A.G. Cullis, P.A.Midgley (eds.), CRC Revivals "Microscopy of Semiconducting Materials 2003", CRC Press, ISBN-13: 978-1-351-08308-9, pp. 135-138 (2018).
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
1 Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, Germany
2 Universität Potsdam, Institut für Physik, Am Neuen Palais 10, 14415 Potsdam, Germany
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