Analyses of degradation mechanisms in single mode InGaN based laser diodes
E. Freier, J. Glaab, J.E. Boschker, J. Enslin, M. Guttmann, S. Makhladi, A. Mogilatenko, C. Netzel, I. Ostermay, C. Stölmacker, and S. Einfeldt
Published in:
IEEE Photonics Conference (IPC 2024), Rome, Italy, Nov. 10-14, ISBN 79-8-3503-6195-7, MC3.1 (2024).
Abstract:
We investigated fabrication aspects of InGaN based laser diodes, such as substrate type, activation of p-type conductivity and facet coating with respect to the device reliability. Material analyses together with ageing studies have identified two degradation mechanisms, which allowed to increase the lifetime from a few 100 h to 10,000 h.
Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Keywords:
InGaN laser diodes, lifetime, degradation mechanisms, facet stability
Copyright © IEEE 2024. All rights reserved.
Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information.
Rightslink® by Copyright Clearance Center
Full version in pdf-format.